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RTCVD Tube Furnace 1200°C_200mm x 3 Heating Zone_Diameter 100mm

SH-RTCVD-100TG200-3

Optimized for Rapid Heating & Cooling Experiments with Furnace-Movement Design

  • Rapid Heating and Cooling CVD Tube Furnace
  • Rapid Heating and Cooling CVD Tube Furnace
  • Rapid Heating and Cooling CVD Tube Furnace
  • Rapid Heating and Cooling CVD Tube Furnace
  • Rapid Heating and Cooling CVD Tube Furnace
  • Rapid Heating and Cooling CVD Tube Furnace
  • Rapid Heating and Cooling CVD Tube Furnace

1200˚C Rapid Thermal CVD (RTCVD) Tube Furnace [Gas Flow Package_200mm length x 3 Hot zone)


RTCVD (Rapid Thermal Chemical Vapor Deposition)
The RTCVD (Rapid Thermal Chemical Vapor Deposition) furnace is designed for high-purity thin film deposition using rapid heating technology. By quickly ramping up to the target process temperature in a controlled atmosphere containing precursor gases, the system induces precise surface chemical reactions that from ultra-pure thin films. 
The short thermal cycles minimize dopant diffusion, defect generation, and interfacial diffusion, resulting in thin films with exceptional purity, uniformity, and compositional accuracy - ideal for advanced device manufacturing. 

 

Heating Technology  

  • Lamp-base rapid heating
    While effective for steep temperature ramping, lamp systems can suffer from significant variations in temperature control depending on the size and geometry of the material. They also require esperienced engineers, making less suitable for general laboratory environments. 

  • Furnace-movement heating
    SH Scientific's furnace-movement design enables fast heating and cooling with far greater temperature recision, regardless of material size or shape. it is easy to operate for laboratory researchers without specialized training and offers a far more economical soultion compared to lamp-based system.


Features  

  • Furnace-Movement Rapid Heating & Cooling - Enables precise 

    temperature control regardless of sample size or geometry.
  • Dual Operation Modes Automatic mode for RTCVD and manual mode for conventional CVD
  • Sub-1000 °C Atmosphere Operation – Optimized for experiments below 1000 °C under controlled atmospheres.
  • Top/Bottom Opening Furnace Body Design – Convenient vertical opening design for easy sample loading and precise positioning.
  • Programmable Preheating Stage – Flexible configuration of the preheating zone to establish the desired atmosphere before the rapid heating process.
  • High-Quality Thin Films – Short thermal cycles minimize dopant diffusion, defect formation, and interfacial mixing, enabling superior film purity and uniformity.
  • Versatile Sealing Structure – Compatible with both vacuum and controlled gas atmospheres.
  • Vacuum & Inert Atmosphere – Oxygen-free vacuum and inert gas purging to protect samples from oxidation.
  • Precision Gas Control (Optional) – Mass Flow Controller (MFC) for accurate and reproducible gas atmosphere regulation.
  • Positive Pressure Control & Tube Protection (Optional) – Back Pressure Regulator (BPR) for maintaining overpressure conditions and preventing quartz tube damage.
  • Enhanced Experimental Performance (Option) – Quartz gas diffuser and wafer carrier for improved gas distribution and optimized process results.
  • User-Friendly Operation – Designed for general laboratory researchers, no specialized operator required.

  

 
 

 



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  • RTCVD (Rapid Thermal Chemical Vapor Deposition)
    The RTCVD (Rapid Thermal Chemical Vapor Deposition) furnace is designed for high-purity thin film deposition using rapid heating technology. By quickly ramping up to the target process temperature in a controlled atmosphere containing precursor gases, the system induces precise surface chemical reactions that from ultra-pure thin films. 
    The short thermal cycles minimize dopant diffusion, defect generation, and interfacial diffusion, resulting in thin films with exceptional purity, uniformity, and compositional accuracy - ideal for advanced device manufacturing. 

    Application Fields of RTCVD

    • Semiconductor Manufacturing – Formation of high-purity thin films for MOSFETs, logic devices, and memory.

    • Doping Processes – Rapid thermal activation and controlled dopant diffusion with minimal defects.

    • Oxide and Nitride Thin Films – Deposition of SiO₂, Si₃N₄, and other dielectric layers with excellent uniformity.

    • Advanced Materials Research – Development of graphene, nanostructures, and other high-performance materials.

    • Photovoltaics – Thin-film deposition for solar cell materials and passivation layers.

    • Display & Optoelectronics – Coating of transparent conductive oxides and functional layers for LEDs and display panels.

    • Aerospace & Energy Devices – Protective thin films, barrier coatings, and specialized layers for extreme environments

     





    RT(Rapid Thermal) CVD Temperature Curve






  • Model SH-RTCVD-100TG200-3
    Max temperature 1200℃ (2192℉)
    Applicable Tube Diameter100 Φ
    Dimension Hot Zone200mm x 3 Hot Zone = Length 600 mm
    Dimension Externa
    (W×D×H) 
    1950x470x1128mm / 76.77x18.50x44.10 ''
    Temp ControllerProgrammable Controller (SP 570)
    Sensor K type
    Heater Capa2.0kW x 3 Zone = 6.0kW
    Heater ElementKanthal A-1
    InsulationCeramic Board & Wool 
    Electrical Requirements
    220V, 50/60Hz, 1Φ
    26 A

     

    Safety Device

    - Electric Leakage Circuit Breaker (E.L.B)

    - Over Temp Controller 

    Option

    - Mass Flow Controller (MFC)

    - Back Pressure Regulator (BPR)

    - Quartz Gas Diffuer

    - Quartz Wafer Carrier 

  • SH Scientific is an Advanced Laboratory Equipment Manufacturer

    If you have any questionsAsk me anything.

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